China's 3nm Chip Breakthrough Without EUV Lithography 2026

Daniel Harrolds
China's 3nm Chip Breakthrough Without EUV Lithography
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China has found a potential workaround to produce 3nm chips without EUV lithography. The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) has experimentally integrated Gate-All-Around (GAA) nanosheet transistors using deep ultraviolet (DUV) lithography, according to DigiTimes. This development could allow China to advance its chipmaking capabilities despite export restrictions on extreme ultraviolet (EUV) equipment.

Why EUV Lithography Is a Bottleneck for China

EUV lithography is essential for manufacturing the most advanced chips at 3nm and below. The technology is dominated by ASML, a Dutch company, and export controls from the US and Netherlands prevent Chinese semiconductor manufacturers from accessing these machines.


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As a result, Chinese companies like SMEE (Shanghai Micro Electronics Equipment) and Shanghai Yuliangsheng Technology have been investing heavily in developing their own DUV equipment. DUV lithography is a generation behind EUV but can still be used for mature nodes and, with advanced techniques, for more cutting-edge designs.

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What Are GAA Nanosheet Transistors?

GAA nanosheet transistors are the next generation of transistor architecture, replacing FinFET. They surround the channel with a gate on all sides, providing better electrostatic control and allowing further scaling. Samsung introduced GAA transistors in 2022 for its 3nm process, TSMC adopted them in 2025 for 2nm, and Intel's 18A process uses GAA RibbonFET transistors.

These companies typically use EUV lithography to pattern the fine features of GAA transistors. IMECAS's achievement is integrating these transistors using DUV lithography, which has longer wavelengths and lower resolution.

How IMECAS Achieved GAA Transistors with DUV

The details of the integration process are not fully disclosed, but it likely involves advanced patterning techniques such as multiple patterning and self-aligned processes to overcome DUV's resolution limits. This approach may increase complexity and cost but could be a viable path for China to produce advanced chips without EUV.

IMECAS is a leading research institute in China, and its work on GAA transistors with DUV is a significant step. However, it's important to note that this is experimental integration, not mass production. Scaling to high-volume manufacturing with acceptable yields will be a major challenge.

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Implications for the Global Chip Industry

If China can successfully manufacture GAA transistors using DUV, it could reduce the effectiveness of export controls aimed at slowing China's semiconductor progress. It might also accelerate China's ability to produce advanced chips for AI, 5G, and other applications.

However, DUV-based GAA transistors may have performance and power drawbacks compared to EUV-based ones. The industry will be watching to see if IMECAS or Chinese manufacturers can commercialize this technology. Anyone following the wider picture can start with China's 3nm Chip Breakthrough Without EUV Lithography.

  • Key takeaway 1: IMECAS integrated GAA nanosheet transistors using DUV lithography, bypassing the need for EUV.
  • Key takeaway 2: This could help China produce 3nm-class chips despite export restrictions.
  • Key takeaway 3: The approach likely uses multiple patterning, which may increase cost and complexity.
  • Key takeaway 4: Commercial viability and yield remain unproven.
  • Key takeaway 5: Samsung, TSMC, and Intel already use GAA transistors with EUV.

Comparison of Transistor Technologies

Company Transistor Type Process Node Lithography
Samsung GAA 3nm EUV
TSMC GAA 2nm EUV
Intel GAA (RibbonFET) 18A EUV
IMECAS (research) GAA Experimental DUV

What to Watch Next

The next steps for IMECAS and Chinese manufacturers will be to improve the process and demonstrate scalability. The semiconductor industry will monitor whether this DUV-based GAA approach can be used in production and how it might affect global competition. The background to this story is set out in Business: latest articles. A related thread runs through LG OLED C6 TV Deal: Save Big on This Year's Model.

Meanwhile, China continues to invest in domestic EUV development, but that is a long-term effort. The DUV-GAA workaround could provide a bridge to more advanced chips in the meantime. Earlier coverage in Nintendo Switch Bundle With Mario Kart 8 Deluxe Launches at $199 shows how the argument developed. A closer look at the same subject appears in Meta's Muse AI Agent: From Answers to Real-World Actions.

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FAQ

What is GAA nanosheet technology?

GAA nanosheet transistors are a type of transistor architecture where the gate surrounds the channel on all sides. They offer better performance and power efficiency than FinFET transistors and are used in the most advanced chips.

Why is EUV lithography important for advanced chips?

EUV lithography uses extreme ultraviolet light to pattern very small features on silicon wafers. It is necessary for manufacturing chips at 7nm and below with high yield and performance.

Can China produce 3nm chips without EUV?

IMECAS's experimental work suggests it may be possible using DUV lithography and advanced patterning techniques, but commercial production at scale has not been demonstrated.

What are the challenges of using DUV for GAA transistors?

DUV has lower resolution than EUV, so multiple patterning steps are needed, which increases cost, complexity, and potential for defects. Yield and performance may be affected.

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Daniel Harrolds

Author

Daniel Harrolds

With a career spanning four decades, Daniel is almost a library in the field of precious metals investing and Gold IRAs. His insightful strategies and pragmatic results-oriented approach make him a resource in safeguarding wealth, and financial foresight.


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